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hanbit hmf1m32 f2va url: www.hbe.co.kr 1 hanbit electronics co., ltd. rev.02(august,2002) general description the hmf1m32 f2va is a high - speed flash read only memory (from) module containing 1,048,576 words organized in a x32bit configuration. the module consists of two 1m x 16 from mounted on a 80 - pin stackable type , double - side d, fr4 - printed circuit board. commands are written to the command register using standard microprocessor write timings. register contents serve as input to an internal state - machine, which controls the erase and programming circuitry. write cycles also int ernally latch addresses and data needed for the programming and erase operations. reading data out of the device is similar to reading from 12.0v flash or eprom devices. output enable (/oe) and write enable (/we) can set the memory input and output. the ho st system can detect a program or erase operation is complete by observing the ready pin, or reading the dq7(data # polling) and dq6(toggle) status bits. when from module is disable condition the module is becoming power standby mode, system designer can g et low - power design. all module components may be powered from a single + 3.0 v dc power supply and all inputs and outputs are lv ttl - compatible. features pin assignment f lash - rom m odule 4mbyte (1m x 32bit) , 80pin - smm, 3.3v des ign part no. hmf1m32f 2va p1 p2 pin symbol pin symbol pin symbol pin symbol 1 vcc 21 vcc 1 vcc 21 vcc 2 nc 22 dq16 2 dq15 22 nc 3 nc 23 dq24 3 dq7 23 nc 4 nc 24 dq17 4 dq14 24 /byte 5 nc 25 dq25 5 dq6 25 /oe 6 /ry_by 26 dq18 6 dq13 26 /ce 7 vss 27 vss 7 vss 27 vss 8 /reset 28 dq26 8 dq5 28 a13 9 /we 29 dq19 9 dq12 29 a29 10 a10 30 dq27 10 dq4 30 a11 11 a21 31 dq20 11 dq11 31 a12 12 a20 32 dq28 12 dq3 32 a22 13 a19 33 dq21 13 dq10 33 a23 14 vss 34 vss 14 vss 34 vss 15 a18 35 dq29 15 dq2 35 a24 16 a17 36 dq22 16 dq9 36 a25 17 a16 37 dq30 17 dq1 37 a26 18 a15 38 dq23 18 dq8 38 a27 19 a14 39 dq31 19 dq0 39 a28 20 vcc 40 vcc 20 vcc 40 vcc 4 cf : address & data bus is organized for lg specification. ( a10 & dq0 are msb, a29 & dq31 are lsb ) w part identification - HMF1M32F2VA : socket 5mm w access time: 70, 80, 90 , 120ns w high - density 4mbyte design w high - reliability, low - power design w single + 3.0 v 0.5v p ower supply w all in / outputs are lv ttl - compatible w fr4 - pcb design w 80 - pin designed by 40 - pin fine pitch connector (x 2ea) w minimum 1 ,0 00,000 write/erase cycle w sector erases architecture options marking w timing 70 n s access - 70 80 n s access - 80 90 n s access - 90 120 n s access - 120 w packages 80 - pin s mm f
hanbit hmf1m32 f2va url: www.hbe.co.kr 2 hanbit electronics co., ltd. rev.02(august,2002) functional block dia gram 4 cf : address & data bus is organized for lg specific ation request. ( a10 & dq0 are msb, a29 & dq31 are lsb ) dq 31 - dq 0 a 29 C a 10 32 a0 - 19 /we /oe dq 0 - 15 /ce u1 ry - by / reset a0 - 19 /we /oe dq 16 - 31 /ce u 2 ry - by / reset / we 20 / oe /c e /ry_by /reset
hanbit hmf1m32 f2va url: www.hbe.co.kr 3 hanbit electronics co., ltd. rev.02(august,2002) truth table mode /oe /ce /we /reset dq ( /byte=l ) power standby x h x vcc 0.3v high - z standby not selected h l h h high - z active read l l h h d out active write or erase x l l h d in active note : x means don t care absolute maximum ratings parameter symbol rating voltage with respect to ground all other pins v in,out - 0. 5 v to vcc+0.5 v voltage with respect to ground vcc v cc - 0.5 v to + 4 .0v storage temperatur e t stg - 65 o c to +1 50 o c operating temperature t a - 55 o c to +125 o c w stresses greater than those listed under " absolute maximum ratings" may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability. recommended dc opera ting conditions p arameter symbol min typ . max vcc for 10% device supply voltages vcc 2.7v 3.6v ground v ss 0 0 0 dc and operating cha racteristics ( 0 o c t a 70 o c ) parameter test conditions symbol min max unit input load current vcc=vcc max, v in = gnd to vcc i l1 1.0 m a output leakage current vcc=vcc max, v out = gnd to vcc i l0 1.0 m a output high voltage i oh = - 2. 0 ma, vcc = vcc min v oh 2.4 v output low voltage i ol = 4.0 ma, vcc =vcc min v ol 0.45 v 5mhz 18 32 vcc active read current (1) /ce = v il , /oe = v ih , 1mhz i cc1 4 8 ma vcc active write curren t (2) /ce = v il , /oe=v ih i cc2 40 60 ma vcc standby current /ce, /reset=vcc 0.3v i cc3 60 ma low vcc lock - out voltage v lko 2.3 2.5 v notes : 1. the i cc current listed is typically less than 2ma/mhz, wit h /oe at v ih . 2 . i cc active while embedded algorithm (program or erase) is in progress 3. maximum icc current specifications are tested with vcc=vcc max
hanbit hmf1m32 f2va url: www.hbe.co.kr 4 hanbit electronics co., ltd. rev.02(august,2002) erase and programmin g performance limits parameter min. typ. max. unit comments sector erase time - 0.7 15 sec chip erase time 25 sec excludes 00h programming prior to erasure byte programming time - 9 3 00 m s chip programming time - 18 54 sec excludes system - level overhead tsop capacitanc e parameter symbol parameter descrip tion test setup min max unit c in input capacitance v in = 0 6 7.5 pf c out output capacitance v out = 0 8 .5 12 pf c in2 control pin capacitance v in = 0 7.5 9 pf notes : test conditions t a = 25 o c, f=1.0 mhz. test specifications test condition 70r, 80 90, 120 unit output load 1ttl gate output load capacitance,c l (including jig capacitance) 30 100 pf input rise and full times 5 ns input pulse levels 0.0 - 3.0 v input timing measurement reference levels 1.5 v output timing measurement reference levels 1.5 v ac characteristics u read only operations characteristics parameter symbols s peed options jedec standard description test setup - 70 r - 80 - 90 - 120 unit t av av t rc read cycle time min 70 80 90 120 ns t avqv t acc address to output delay /ce = v il /oe = v il max 70 80 90 120 ns t elqv t ce chip enable to output delay /oe = v il max 70 80 90 120 ns t glqv t oe chip enable to output delay max 30 30 35 35 ns t ehqz t df chip enable to output high - z max 25 25 30 30 ns t ghqz t df output enable to output high - z max 25 25 30 30 ns t axqx t qh output hold time from addresses, /ce or /oe, whichever occurs first min 0 ns
hanbit hmf1m32 f2va url: www.hbe.co.kr 5 hanbit electronics co., ltd. rev.02(august,2002) u erase/program ope rations parameter symbols s peed options jedec standard description 70r 80 90 120 unit t avav t wc write cycle time min 70 80 90 12 ns t avwl t as address setup time min 0 ns t wlax t ah address hold time min 45 45 45 50 ns t dvwh t ds data setup time mi n 35 35 4 5 50 ns t whdx t dh data hold time min 0 ns t oes output enable setup time min 0 ns t ghwl t ghwl read recover time before write min 0 ns t elwl t cs /ce setup time min 0 ns t wheh t ch /ce hold time min 0 ns t wlwh t wp write pulse width min 35 35 35 50 ns t whwl t wph write pulse width high min 30 ns t whwh1 t whwh1 byte programming operation typ 9 m s t whwh2 t whwh2 sector erase operation (note1) typ 0.7 sec t v cs vcc set up time min 50 m s notes : 1 . this does not include the preprogramm ing time 2 . this timing is only for sector protect operations 5.0v device under test 2.7k w diodes = in3 064 or equivalent 6.2k w in3064 or equivalent c l note : c l = 100pf including jig capacitance
hanbit hmf1m32 f2va url: www.hbe.co.kr 6 hanbit electronics co., ltd. rev.02(august,2002) u erase/program operations alternate /ce controlled writes parameter symbols s peed options jedec standard description - 70r - 80 - 90 120 unit t avav t wc write cycle ti me min 70 80 90 12 ns t avwl t as address setup time min 0 ns t wlax t ah address hold time min 45 45 45 50 ns t dvwh t ds data setup time min 35 35 4 5 50 ns t whdx t dh data hold time min 0 ns t oes output enable setup time min 0 ns t ghwl t ghwl read r ecover time before write min 0 ns t elwl t cs /ce setup time min 0 ns t wheh t ch /ce hold time min 0 ns t wlwh t wp write pulse width min 35 35 35 50 ns t whwl t wph write pulse width high min 30 ns t whwh1 t whwh1 byte programming operation typ 9 m s t wh wh2 t whwh2 sector erase operation (note1) typ 0.7 sec notes : 1. this does not include the preprogramming time 2 . this timing is only for sector protect operations
hanbit hmf1m32 f2va url: www.hbe.co.kr 7 hanbit electronics co., ltd. rev.02(august,2002) u read operations timing u reset timing
hanbit hmf1m32 f2va url: www.hbe.co.kr 8 hanbit electronics co., ltd. rev.02(august,2002) u program operations timing u chip/sector erase operation timings
hanbit hmf1m32 f2va url: www.hbe.co.kr 9 hanbit electronics co., ltd. rev.02(august,2002) u data# polling times(during embedded algorithms) u toggle# bit timings (during embedded algorithms)
hanbit hmf1m32 f2va url: www.hbe.co.kr 10 hanbit electronics co., ltd. rev.02(august,2002) u sector protect unprotect timeing diagram u alternate ce# co ntrolled write operating timings
hanbit hmf1m32 f2va url: www.hbe.co.kr 11 hanbit electronics co., ltd. rev.02(august,2002) package dimensions 1.30 0.1 plug (memory) receptacle (main board)
hanbit hmf1m32 f2va url: www.hbe.co.kr 12 hanbit electronics co., ltd. rev.02(august,2002) o r dering information part number density org. package component number vcc speed HMF1M32F2VA - 70 4mbyte x 32 80pin C smm 2ea 3.3v 70ns HMF1M32F2VA - 80 4mbyte x 32 80pin C smm 2ea 3.3v 80ns HMF1M32F2VA - 90 4mbyte x 32 80pin C smm 2ea 3.3v 90 ns HMF1M32F2VA - 120 4mbyte x 32 80pin - smm 2ea 3.3v 120ns

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